200微米DC腐蚀铝箔极限长度的研究

Research of limiting length on 200 micron DC etching aluminum foil

为了探讨电子铝箔经直流电腐蚀后形成隧道孔的生长机理,进一步提高电子铝箔的腐蚀工艺水平,研究了200微米HEC光箔的极限长度在硫酸浓度、温度、二级腐蚀等条件下的影响。发现只改变一级硫酸浓度而不经过二级腐蚀,隧道孔的极限生长有限,不能贯穿整个夹芯层,这可能是光箔成分和立方织构影响蚀孔的生长方向。在不添加硫酸的条件下温度对极限长度的影响非常小,低于70℃下甚至不生长隧道孔,所形成的夹芯层非常厚。而经过0.8 mol/L游离酸的二级腐蚀,隧道孔径向生长可以贯穿整个夹芯层。

In order to explore the mechanism of tunnel pits growth of A1 foil after etching by direct current, and then improve the etching process. Limiting length of 200 μm AI foil under different concentration of H2SO4, temperature and two-step etched was studied. It is found that only changing the concentration of H2SO4 for one-step etched, the limiting length of tunnel pit can not be grow throughout the entire AI foil. It is possibility that the pit growth is changed by impurity element and cubic texture orAl foil. Without adding H2SO4 to the electrolytic solution, the limiting length is few influenced by the temperature. When the temperature is lower than 70 ℃, few tunnel pits grow and the non-etching layer turns thicker. However, after two-step etching of 0.8 mol/L I-I＋ electrolytic solution, the tunnel pit can penetrate the non-etching layer.