ZnO缓冲层和退火处理对MgO薄膜结构的影响

Effects of ZnO buffer layer and annealing process on structural properties of MgO thin films

采用直流反应磁控溅射法在Si衬底上引入ZnO缓冲层制备了沿(200)晶面择优取向生长的MgO薄膜,然后分别采用快速退火和常规退火两种不同的方式对MgO薄膜进行晶化处理。利用X射线衍射仪(XRD)以及原子力显微镜(AFM)研究了ZnO缓冲层以及两种不同的退火方式对MgO薄膜的结构和形貌的影响。结果表明:具有合适厚度的ZnO缓冲层可以显著地提高MgO薄膜的结晶质量。另外,与快速退火相比,常规退火处理后得到的MgO晶粒均匀圆润,有着较大的(200)衍射峰强度以及较小的表面粗糙度。

（200） oriented MgO thin films were prepared on Si substrate with ZnO buffer layer by direct current （DC） reactive magnetron sputtering method, then the as-grown MgO thin films were crystallized by the conventional furnace annealing （CFA） and rapid thermal annealing （RTA）, respectively. The effects of ZnO buffer layer and annealing treatment on the structure and morphology of MgO thin films were investigated by X-ray diffraction （XRD） and atomic force microscope （AFM）. The results show that the crystalline quality of MgO thin films can be improved significantly by the ZnO buffer layer with appropriate thickness. In addition, compared with the MgO thin films annealed by RTA, the samples annealed by CFA possess better qualities including uniform rounded grains, smaller surface roughness and larger XRD intensity of the （200） peak.