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Sb_2S_3纳米线合成和表征

Synthesis and characterization of Sb_2S_3 nanowires
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摘要 一维半导体纳米材料是目前科学界的研究热点,Sb2S3具有很高的光敏性能和热电性能,在光电和太阳能应用方面具有很好的潜质.本文通过简单的水热法合成出了大量的Sb2S3单晶纳米线,纳米线直径约为60nm,长度达到几个毫米.用系列复杂的分析测试手段,包括X射线粉末衍射,高分辨像,和选区电子衍射等对纳米线的晶体结构进行了表征,结果显示Sb2S3纳米线属于单一的Sb2S3正交相.紫外-可见光吸收光谱实验显示纳米线能带宽度大约是1.5eV. Recently,investigation of one-dimension nanomaterials has attracted the attention of the science.Sb2S3 has great potential application in photoelectricity and solar aspect,because of its high photosensitive and thermoelectric the large-scale ultralong single-crystalline Sb2S3 nanowires were prepared using a simple hydrothermal method.The nanowires are usually several millimeters in length,typically 60 nm in diameters.The structure of the nanowiress is determined to be of the pure orthorhombic phase using series of comprehensive methods,including powder X-ray diffraction(XRD) experiment,high-resolution images,and select area electron diffraction(SAED).Optical absorption experiment reveals that the nanowires are a semiconductor with a band width Eg≈1.5 eV.
作者 丁翔 董芳
出处 《陕西科技大学学报(自然科学版)》 2012年第5期34-37,共4页 Journal of Shaanxi University of Science & Technology
关键词 水热法 纳米线 选区电子衍射 hydrothermal method nanowires select area electron diffraction
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  • 1Y. Huang,X. F. Duan, Y. Cui, et al. Helical microtubes of graphltic carbon[J]. Science,2001,294(9):1313- 1 317.
  • 2A. Bachtold, P. Hadley, T. Nakanishi, et al. Logic circuits with carbon nanotubes transistors[J]. Science,2001, 294 (9):1 317 -1 320.
  • 3R. Martel,T. Schmidt, H. R. Shea, et al. Single and multi- wall carbon nanotube field-effect transistors l J]. AppI. Phys. I.ett. ,1998,73(17):2 447 -2 449.
  • 4B. Roy, B. R. Chakbraborty, R. Bhattacharya, et al. Electri- cal and magnetic properties of antimony telluride[J]. Solid State Commun,1978,25(8) :617-620.
  • 5O. Savadogo, K. C. Mandal. Studies on new chemically de- posited photoeonducting antimony trisulphide thin film [J]. Sol. Energy Mater. Sol. Cells, 1992, 26 (1-2): 117- 136.
  • 6D. Arivuoli, F. D. Gnanam,P. Ramasamy. Growth and mi- crohardness studies of ehalcogenides of arsenic, antimony and bism uth[J]. J. Mater. Sei. Lett. , 1988,7 (7) : 711-713.
  • 7X. W. Zheng,Y. Xie,L. Y. Zhu,et al. Growth of Sb2Ea (E = S, Se) polygonal tubular crystals via a novel solvent-re- lief-self-seeding process [J]. Inorg. Chem. , 2002,41 (3) : 455 -461.
  • 8P. Arun, A. G. Vedeshwar. Phase modification ky instan taneons heat treatment of Sb2Sa films and their potential for photothermal optical recording [ J ]. J. Appl. Phys. , 1996,79(8) :4 029-4 056.
  • 9C.D. Lokhande. A chemical method for preparation of metals sulfide thin-films[J]. Mater. Chem. Phys. , 1991, 28(1) : 145-149.
  • 10Y. Yu,C. H. Jin,R. H. Wang,et al. High quality ultralong Bi2 Sa nanowires : growth, structure, and properties[J]. J. Phys. Chem. B,2005,109(40) :18 772-18 776.

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