激发频率对纳米晶硅薄膜微结构的影响

Influence of Excitation Frequencies on Microsturcture of Nanocrystalline Silicon Thin Films

以SiH4和H2为气源,采用等离子体增强化学气相沉积(PECVD)技术制备了纳米晶硅薄膜,利用傅里叶变换红外光谱技术对不同激发频率下薄膜的微结构变化进行了研究.结果表明,薄膜中的氢含量(摩尔分数)和硅氢键合模式与激发频率有密切关系,提高激发频率可降低薄膜中的氢含量,并且硅氢键合以SiH2为主.

Nanocrystalline silicon thin films were prepared from a gas mixture of silane （SiH4） and hydrogen（H2）by plasma enhanced chemical vapor deposition. The microstructures of deposited films at different excitation frequencies were studied by Fourier transform infrared spectroscopy. The results show that the hydrogen content and the silicon-hydrogen bonding configurations of the films are closely related to the excitation frequency,increasing the excitation frequency can decrease the hydrogen content in the films and change Si-H bonding configuration mainly in SiH2.