摘要
阐述了硅系相变材料的研究热点和应用前景.通过原位变温X线衍射(XRD)检测技术,揭示了硅系相变材料在变温过程中的物相结构变化.升温时,硅系相变材料由非晶态转化为晶态,电导性增加;降温时,由晶态转化为非晶态,电导性下降,这对相变储存器存储与擦除技术的实现起关键作用.
The research focus and application prospects of silicone phase change materials were reviewed. Through in-situ variable temperature XRD technology, the phase structure changes of silicone phase change materials in the process of changing temperature were revealed. It shows that in warning up, silicone phase change materials can transit from amorphous to crystalline and increase electrical conductivity, while transit from crystalline to amorphous in cooling and decrease electrical conductivity, which plays a key role in the implementation of phase change memory storage and erasure technologies.
出处
《上海工程技术大学学报》
CAS
2012年第3期263-266,共4页
Journal of Shanghai University of Engineering Science
基金
上海工程技术大学研究生科研创新资助项目(2011yjs21)
上海工程技术大学研究生创新能力培养专项基金资助项目(B-8909-11-03008)
上海市高校优秀青年教师培养基金资助项目(gjd11033)
关键词
相变材料
原位变温X线衍射
物相结构
phase change materials
in-situ variable temperature XRD
phase structure