期刊文献+

硅系相变材料的研究进展 被引量:1

Research Progress of Silicone Phase Change Materials
下载PDF
导出
摘要 阐述了硅系相变材料的研究热点和应用前景.通过原位变温X线衍射(XRD)检测技术,揭示了硅系相变材料在变温过程中的物相结构变化.升温时,硅系相变材料由非晶态转化为晶态,电导性增加;降温时,由晶态转化为非晶态,电导性下降,这对相变储存器存储与擦除技术的实现起关键作用. The research focus and application prospects of silicone phase change materials were reviewed. Through in-situ variable temperature XRD technology, the phase structure changes of silicone phase change materials in the process of changing temperature were revealed. It shows that in warning up, silicone phase change materials can transit from amorphous to crystalline and increase electrical conductivity, while transit from crystalline to amorphous in cooling and decrease electrical conductivity, which plays a key role in the implementation of phase change memory storage and erasure technologies.
出处 《上海工程技术大学学报》 CAS 2012年第3期263-266,共4页 Journal of Shanghai University of Engineering Science
基金 上海工程技术大学研究生科研创新资助项目(2011yjs21) 上海工程技术大学研究生创新能力培养专项基金资助项目(B-8909-11-03008) 上海市高校优秀青年教师培养基金资助项目(gjd11033)
关键词 相变材料 原位变温X线衍射 物相结构 phase change materials in-situ variable temperature XRD phase structure
  • 相关文献

参考文献6

二级参考文献140

  • 1刘波,宋志棠,封松林.相变型半导体存储器研究进展[J].物理,2005,34(4):279-286. 被引量:20
  • 2韩媛媛,张宇民,韩杰才,张剑寒,姚旺,周玉峰.国内外碳化硅反射镜及系统研究进展[J].材料工程,2005,33(6):59-63. 被引量:22
  • 3于海蛟,周新贵,张长瑞,曹英斌,刘荣军,张玉娣.SiC反射镜及其制备工艺的研究进展[J].新技术新工艺,2006(5):26-30. 被引量:6
  • 4刘波,宋志棠,封松林.我国相变存储器的研究现状与发展前景[J].微纳电子技术,2007,44(2):55-61. 被引量:14
  • 5谭艳,唐元洪,裴立宅,陈扬文.硅纳米线拉曼光谱的研究[J].光谱学与光谱分析,2007,27(4):725-729. 被引量:5
  • 6[11]Yamada N,Matsunaga T.Structure of laser-crystallized Ge2Sb2 + x Te5 sputtered thin films for use in optical memory.J Appl Phys,2000,88(12):7020
  • 7[12]Friedrich I,Weidenhof V,Njoroge W,et al.Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements.J Appl Phys,2000,87(9):4130
  • 8[1]Ovshinsky S R.Reversible electrical switching phenomena in disordered structures.Phys Rev Lett,1968,21(20):1450
  • 9[2]Chen Y C,Chen C T,Yu J Y,et al.180nm Sn-doped Ge2Sb2Te5 chalcogenide phase-change memory device for low power,high speed embedded memory for SoC applications.IEEE Custom Integrated Circuits Conference,2003,16.4:395
  • 10[3]Liu Bo,Zhang Ting,Xia Jilin,et al.Nitrogen-implanted Ge2Sb2Te5 film used as multilevel storage media for phase change random access memory.Semicond Sci Technol,2004,19(6):L61

共引文献34

同被引文献29

  • 1胡林彦,张庆军,沈毅.X射线衍射分析的实验方法及其应用[J].河北理工学院学报,2004,26(3):83-86. 被引量:65
  • 2梁敬魁.粉末衍射法测定晶体结构(二)[M]北京:科学出版社,2003.
  • 3Matthea A P,Marjorie A L. Comparison of Nanoscaled and Bulk NiO Structural and Environmental Characteristics by XRD,XAFS,and XPS[J].Chemistry of Materials,2012.4483-4490.
  • 4杨于兴;漆王睿.X射线衍射分析[M]上海:上海交通大学出版社,1989.
  • 5刘粤恵;刘平安.X射线衍射分析原理与应用[M]北京:化学工业出版社,2003.
  • 6李树棠.晶体X射线衍射学基础[M]北京:冶金工业出版社,1990.
  • 7Li Z,Wang Y,Liu J. Photocatalytic hydrogen production from aqueous methanol solutions under visible light over Na(BixTa1-x)O3 solid solution[J].International Journal of Hydrogen Energy,2009,(01):147-152.doi:10.1016/j.ijhydene.2008.10.027.
  • 8Zhu D,Zhu H,Zhang Y. Microstructure and magnetization of single-crystal perovskite manganites nanowires prepared by hydrothermal method[J].Journal of Crystal Growth,2003,(1-2):172-175.
  • 9Soon K K,Sang M J,Sang D K. Quantitative X-ray Diffraction Analysis for Sulfation of Limestonein Flue Gas Desulfu-rization[J].Industrial and Engineering Chemistry Research,2000.2496-2504.
  • 10Mehtap O,Frederic H,Peter S. In Situ Observation of Bimetallic Alloy Nanoparticle Formation and Growth Using High-Temperature XRD[J].Chemistry of Materials,2011.2159-2165.

引证文献1

二级引证文献16

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部