ACRT-Te溶剂法生长的ZnTe:Cr晶体的光谱性能

Spectroscopic Properties of ZnTe:Cr Crystal Grown by ACRT-Te Solvent Method

采用改进的ACRT-Te溶剂法制备了ZnTe∶Cr晶体,并对晶体的光谱特性进行了表征。紫外-可见-近红外透过光谱分析表明,晶体在800 nm和1790 nm处出现了与Cr2+有关的强吸收,并在570～750 nm范围内存在与Zn空位有关的吸收。低温光致发光(PL)谱分析表明,晶体在530 nm附近和595～630 nm之间出现近带边(NBE)发射和自激活(SA)发射。进一步分析表明,NBE发射由受主束缚激子(A1,X)峰、电子-受主对(e,A)峰和施主-受主对(DAP)发光峰组成。利用Arrhenius公式对变温PL谱上的NBE峰进行拟合,得出样品在低温(<50 K)和高温(>50 K)时的热猝灭激活能分别为3.87 meV和59.53 meV。红外荧光谱分析表明,ZnTe∶Cr晶体的室温荧光发射带为2～2.6μm,荧光寿命为1.0×10-6s。

ZnTe：Cr crystal was grown by a modified ACRT-Te solvent method and its spectroscopic properties were characterized.The UV-Vis-NIR transmission spectrum shows two strong absorptions related to Cr2＋ located at the wavelength of 800 nm and 1790 nm as well as the VZn-related absorption in the range of 570-750 nm.Low temperature PL spectrum indicates two peak bands at near 530 nm and 595-630 nm assigned to near band edge（NBE） and self-activation（SA） emissions.Further analysis demonstrates that the NBE emission is composed of acceptor-bound-excition（A1,X） band,electron-acceptor band（e,A） and donor-acceptor-pair（DAP） band.Temperature-dependent PL spectrum of NBE peak is fitted by Arrhenius formula,from which the thermal quenching activation energies of ZnTe：Cr crystal at low（50 K） and high（50 K） temperatures are obtained to be 3.87 meV and 59.53 meV,respectively.Infrared fluorescence spectrum indicates that ZnTe：Cr crystal produces fluorescence emission band in the range of 2-2.6 μm at room-temperature,with the fluorescence lifetime of 1.0×10-6 s.