不同半导体材料构成光子晶体在太赫兹波段能态密度特性

State Density Properties of Photonic Crystal Composited by Different Semiconductor Material in Terahertz Band

基于平面波展开法研究Ⅳ、Ⅲ-Ⅴ和Ⅱ-Ⅵ族半导体材料构成二维三角晶格光子晶体在太赫兹波段的能态密度特性,数值模拟得到Ⅳ族SiC在填充率f=0.8时形成0.037 THz带隙宽度,Ⅱ-Ⅵ族ZnO在填充率f=0.73时形成0.0417 THz带隙宽度,不同填充率情况下Ⅲ-Ⅴ族半导体材料形成0.027 THz带隙宽度,比较数据Ⅱ-Ⅵ族半导体材料形成较宽的带隙,研究结果为太赫兹光子晶体器件的开发提供了理论依据。

Based on the plane wave expansion method research Ⅳ,Ⅲ-Ⅴ and Ⅱ-Ⅵ semiconductor material composition family 2d triangle photonic crystal lattice terahertz band state density of characteristics,numerical simulation to get Ⅳ family in filling SiC rate f=0.8 form 0.037 THz band gap width,Ⅱ-Ⅵ ZnO family in filling rate f=0.73 form 0.0417 THz band gap width form,the filler rate case Ⅲ-Ⅴ race semiconductor material form 0.027 THz band gap width,more data Ⅱ-Ⅵ race semiconductor material form more wide band gap,the result is too Hertz photonic crystal devices to provide the theoretical basis for development.