摘要
DDR信号的阻抗匹配一般有两种方法:源端增加串联电阻和终端增加并联电阻。这两种方法各有利弊。其中源端串阻匹配会增加单板PCB的布板面积,终端并联匹配则会增加单板的功耗。本文则采用并联电容来替代并联电阻,这样即可以解决PCB布板面积的问题,也可以解决单板机功耗增加的问题,是DDR信号匹配的一种新方法。
There are two ways of DDR signal impedance marching:add the series-resistance in the source or add the shunt-resistance in the terminal.The two methods have their advantages and disadvantages.Source matching will increase the PCB plate area.Terminal matching will increase the power.This paper uses the shunt-capacitor to replace the shunt-resistance,which can solve the problem of PCB layout area,and the problem of single board power increased.It is a new method of DDR signal impedance matching.
出处
《宁波职业技术学院学报》
2012年第5期13-14,45,共3页
Journal of Ningbo Polytechnic
关键词
DDR
信号
阻抗匹配
DDR
signal
impedance marching