非晶CIGS前驱膜无硒退火的相变历程

Synthesis pathways of CIGS from an amorphous precursor film

采用一步射频磁控溅射法在室温获得了CIGS薄膜,研究了不同的真空无硒退火温度(150～350℃)对CIGS薄膜相变历程的影响。薄膜相变历程中的结构和性能采用XRD、SEM、EDS、紫外-可见光吸收和四探针等测试手段进行测试表征。结果表明,室温下制备的CIGS薄膜为非晶态,随退火温度升高发生非晶CIGS→CuSe→CIGS的相变。150℃退火形成的CuSe薄膜的电阻率最低,光透过性能最差。退火温度超过200℃便生成CIGS相,CIGS相的结晶质量随退火温度升高而改善,薄膜的电阻率和光透过率也随退火温度的提高而增加。

In this paper, copper indium gallium selenium （CIGS） thin films were deposited by RF magnetron sputtering from a single quaternary target without any additional selenization, followed by one-stage annealing at different temperature （150-350℃） in argon vacuum （100Pa）. The as-deposited and annealed CIGS thin films were characterized by XRD, SEM, EDS, UV-Vis spectrophotometer, four point probe instrument. Measurement results show that the CIGS thin film exhibit amorphous feature when depositing at room temperature. Phase evolution was occurred from amorphous CIGS precursors to CuSe phase then to CIGS phase with the increase of annealing temperature. The CuSe phase formed at the annealing temperature of 150℃, and it shows the lowest resistance and light transmittance in the annealed samples. CIGS phase formed as the annealing the temperature is beyond 200℃. The grains size, crystallization quality, resistance and light transmittance of the corresponding films were enhanced with the increase of annealing temperature.