摘要
通过对SMIC 0.13μm CMOS工艺的反型MOS电容的特性研究与测试验证,实现了一个2.82~4.04GHz的低调谐增益变化、低子带频率间隔变化、差分调谐宽带电感电容压控振荡器(LC VCO)。测试结果显示,频率覆盖范围为2.82~4.04 GHz,子带间距变化从12~6.9 MHz,中心差分调谐增益从23~17 MHz/V,相位噪声在频偏1 MHz处为-113^-118 dBc/Hz。
Based on the comprehensive study and verification of inversion MOS capacitor,a 2.82~4.04 GHz differential tuned LC voltage controlled oscillator(VCO) with low Kvco and small sub-bands frequency step variation as well as wide band has been implemented in SMIC 0.13 μm CMOS technology.The measurement results show that a tuning range of 2.82~4.04 GHz,sub-bands frequency step variation of 12~6.9 MHz,center differential Kvco of 23~17 MHz/V and phase noise of-113~-118 dBc/Hz have been achieved.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2012年第5期483-488,共6页
Research & Progress of SSE
基金
新一代宽带无线移动通信网(2010ZX03001-004)