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绒面掺铝氧化锌薄膜的制备及其特性研究

Preparation and Characteristics Research of Textured Al-Doped Zinc Oxide Films
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摘要 采用磁控溅射法在较低温度下制备出室温电阻率为3.4×10-4Ω.cm,可见光范围内平均透过率为84%的掺铝的氧化锌(ZnO∶Al(AZO))薄膜。通过乙酸和盐酸溶液的腐蚀制备绒面AZO薄膜,利用X射线衍射(XRD)、紫外/可见光谱仪和扫描电子显微镜(SEM)研究了不同酸溶液及溶液浓度对薄膜微观形貌和光电性质的影响。XRD测量结果表明薄膜呈六角纤锌矿结构,且具有良好的c轴取向。UV-Vis紫外可见光谱结果表明薄膜具有良好的透过率。SEM结果表明使用盐酸溶液比乙酸更容易获得陷光的绒面结构,薄膜在质量分数为0.5%的盐酸中腐蚀25 s后形成了相对较好的绒面结构。 Aluminium-doped zinc oxide(AZO) films were deposited by using magnetron sputtering technique at low temperature.For the AZO film,the optimal resistivity obtained is 3.4×10-4Ω·cm and 84% respectively within the visible wavelength range.The textured AZO films were fabricated using acetic acid and hydrochloric acid.X-ray diffractometer(XRD),ultraviolet-visible spectrometer(UV-Vis) and scanning electron microscopy(SEM) have been used to examine the effects of different acids and the solution concentration on film morphology and photoelectric properties.The results of the XRD spectra measuremcnts demonstrate that the crystal structure of the AZO films is hexagonal wurtzite and show the typical c-axis crystallographic orientation.The UV-visible spectra show that the films have good transmittance.The SEM results show that the trap light textured films are easier formed in the hydrochloric acid solution than that in the acetic acid and after etched 25 s in the mass fraction of 0.5% hydrochloric acid relatively well textured films are fabricated.
出处 《半导体技术》 CAS CSCD 北大核心 2012年第11期858-862,893,共6页 Semiconductor Technology
关键词 中频脉冲磁控溅射 AZO薄膜 衬底温度 光电性质 绒面结构 middle-frequency magnetron sputtering AZO films substrate temperature photoelectric properties texture
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参考文献9

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