强激光辐照半导体材料的温升及热应力损伤的理论研究

Thermal Stress Damage of Semiconductors Induced by Laser Beam

分别采用数值方法与解析方法 ,研究了连续波激光辐照半导体材料时产生的温升及热应力 .讨论了不同激光参数 强度、波形、波长及脉冲持续时间 与温度及热应力之间的关系 ,以及造成半导体材料热应力损伤的激光阈值强度 .

The problems of temperature rise and thermal stress damage of semiconductors material induced by chemical laser beam are studied by using a numerical and analytical method. Thermal stress and temperature rise distributions at different laser parameters of detector material are calculated. The thermal stress damage threshold of detector material induced by laser beam is obtained.