摘要
SOI-SIMNI (Silicon On Insulator-Separation by Implanted Nitrogen) films were formed with standard method and multiple-step implantation one. The Hall-e ffect measurements (4—300K) show that the multiple-step implanted SIMNI films have a lower sheet resistance and higher carrier mobility than those in standar d SIMNI films. The DLTS results indicate that there is a deep level defect (E_t=0.152 eV) in the standard SIMNI films but no such defects in the multip le-step implanted ones. The multiple-step implanted SIMNI films have good elec trical properties.
SOI-SIMNI (Silicon On Insulator-Separation by Implanted Nitrogen) films were formed with standard method and multiple-step implantation one. The Hall-e ffect measurements (4—300K) show that the multiple-step implanted SIMNI films have a lower sheet resistance and higher carrier mobility than those in standar d SIMNI films. The DLTS results indicate that there is a deep level defect (E_t=0.152 eV) in the standard SIMNI films but no such defects in the multip le-step implanted ones. The multiple-step implanted SIMNI films have good elec trical properties.
基金
Project Supported by National Natural Science Foundation of China Under Grant !No.697760 0 6.
