质子轰击GaP外部电光采样

Proton-Bombarded GaP External Electro\|Optic Sampling\+*

采用质子轰击 n- Ga P晶体作为外部电光采样材料 ,用倍频移相扫描电光采样技术和反射式光路结构 ,对 ITO共面波导上的微波信号进行了测量 .结果表明 ,用质子轰击的方法可以使n- Ga P样品的电阻增大四个量级 ,接近于半绝缘材料 ,能有效地减小 Ga P晶体内部自由电荷对电场的屏蔽效应 .在 2 .30 GHz微波信号时 ,质子轰击 Ga P外部电光采样测量获得了 40 m V/Hz的电压灵敏度 .

Microwave signals propagating on the indium\|tin oxide coplanar wavegui de were measured by proton\|bombarded GaP external electro\|optic sampling with mu ltiple\|frequency phase\|shift scanning system. Measurements of proton\|bombard ed G aP sample indicate that the resistance value is four orders greater than that of the un\|bombarded. The system is of 40mV/Hz sensitivity as the micro wave frequency is 2.30GHz.