摘要
以氧化铟锡膜为例 ,讨论氧化物半导体透明导电薄膜载流子浓度的理论上限 ,建立模型并给出理论公式 ,得出氧空位和掺杂的最佳含量值。该理论也适用于掺铝氧化锌薄膜。
Take the indium tin oxide thin films as an example,theoretical upper limitation of carrier concentration of oxide semiconductor transparent conductive thin films is discussed,a model has been set up and a theoretical formula is given, the optimum content of oxygen vacancies or tin doping is obtained.This theoretical formula can also be applied to aluminum_doped zinc oxide films.
出处
《现代显示》
2000年第3期18-22,共5页
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