摘要
利用灰阶编码掩模实现光学邻近效应精细校正是改善光刻图形质量的有效方法 ,设计并利用电子束直写系统加工了用于实现邻近效应校正的灰阶编码掩模 ,首次在投影光刻系统上用这一方法实现了光学邻近效应校正 ,获得了满意的实验结果 ,在可加工 0 7微米的I线曝光装置上获得了经邻近效应校正的 0 5微米光刻线条。
It is an effective method to use coding gray tone mask for OPC in submicron photolithography. We design the OPC mask and fabricate it by the E beam lithography system. Some 0.5μm features have been got by using the coding gray tone mask in I line projection system which can only fabricate 0.7 μm feature without OPC. The experimental results are satisfied, which demonstrate the practicabillity of the method in mask optimum.
出处
《微细加工技术》
EI
2000年第2期39-44,共6页
Microfabrication Technology
基金
国家自然科学基金资助项目!(6 990 70 0 3)