摘要
介绍了用微波反射法测量HgCdTe中的少数载流子寿命 ,分析了其测量原理 ,并与接触式的光电导衰减法进行了对比。
A new method of microwave reflectance applied in measurement for the minority carrier lifetime in HgCdTe is introduced.The measuring mechanism is analyzed and comparison with the contact photoconduction decay measurement is carried out.
出处
《半导体光电》
CAS
CSCD
北大核心
2000年第4期253-255,共3页
Semiconductor Optoelectronics