降低肖特基势垒高度的途径探讨

Research on Reduction of the Height of Schottky Barriers

通过深入地分析影响金属 -半导体肖特基势垒的各种因素 ,探讨了几种降低肖特基势垒高度的途径 ,其中 ,特别是通过汽相激光诱导化学掺杂技术在金属 -半导体界面上制作一足够薄的高掺杂层 ,可以使肖特基势垒高度得到显著降低。这种技术的应用 ,对在PtSi/Si界面上制作超浅结和在半导体器件中制作良好的欧姆接触提供了广阔的应用前景。

Based on thorough analysis on various factors affecting a metal-semiconductor Schottky barrier,several approaches are discussed in this paper with the aim of reduction of the height of the Schottky barrier.Specifically,by using laser induced chemistry adulteration technique in the gas environment to incorporate a thin highly doped layer at the interface of a metal-semiconductor,the height of the Schottky barrier can be markedly reduced.This is a new approach,which has a wide application future.It has been used to form a thin ultralinear junction at the interface of PtSi/Si as well as to form a semiconductor ohmic contact.