XeCl激光晶化制备多晶硅薄膜及椭偏谱分析

Poly-Si Thin Film Prepared by XeCl Excimer Laser Crystallization and Its Ellipsometric Analysis

采用新型的两步激光晶化技术在玻璃衬底上制备出性能良好的多晶硅薄膜 ,并制作了多晶硅薄膜晶体管 ,其迁移率为 10 3cm2 /V·s ,开关态电流比为 1× 10 7。采用椭偏光谱法分析了薄膜的结构 ,并提出多层膜模型模拟薄膜结构。测量结果与计算数据十分吻合。

A novel approach of two-step laser crystallization for the growth of poly-Si thin film on glass substrate is investigated.Using this approach,poly-Si thin film transistors (TFTs) with electron mobility of 103 cm 2/V·s and on/off current ratio of 1×10 7 are prepared.These parameters are better than those of the poly-Si TFTs fabricated by conventional single-step excimer laser crystallization.The structure of the laser crystallized poly-Si thin film is analyzed by using spectroscopic ellipsometry.Models to simulate the poly-Si thin film are proposed and calculation of the ellipsometric spectra is carried out.