期刊文献+

硅基纳米材料制备技术的新进展

New progress on fabrication technology of Si?based nanostructure materials
下载PDF
导出
摘要 近年 ,硅基低维材料物理与工艺的研究预示 ,硅基光电子学将是今后半导体光电子学的一个主要发展方向 ,而对硅基纳米材料的研究一直是本领域的一个研究热点 ,评述了近年硅基纳米材料在制备技术方面所取得的新进展 ,并展望了今后的发展方向。 In the recent years,the study of Si?based low?dimentional physics and technology indicates that Si?based optoelectronics will be one of the main topics in the semiconductor optoelectronics research area in the near future.The research on Si?based nanostructure materials has been being the hot subject in the area.The new progress on fabrication technology of si?based nonostructure materials and it's future development are reviewed.
出处 《微细加工技术》 EI 2000年第3期6-11,共6页 Microfabrication Technology
关键词 硅基纳米材料 制备技术 可见光发射 Si-based nanostructure material fabrication technology light emission
  • 相关文献

参考文献15

  • 1Tsutsumi,T. Tomizawa,K. Ishii. K. Fabrication technology ofultrathin SiO2 masks and Si nanowires using oxidation of vertical sidewalls of ploty-Silayer[J]J. Vac. Sci. Tec. B., 1999,17:77.
  • 2Yasuda,Y. Hwang,D.S. Park, J.W. etal. Selective formation of Si microstructuresusing ultra thin SiO2 mask layers[J]. Appl. Phys. Lett.,1999,74: 653.
  • 3Miyata, N. Watanabe,H. Ichikawa, M. Nanometer-scal Si-selective expitaxial growthusing ultra thin SiO2 mask[J]. J. Vac. Sci. Tec., 1999, B, 17: 978.
  • 4Luhai,Liuhongjian,Weili,et al. Microstructure characterization of oxidizednanocrystalline Si: H film by trans10mission electron microscopy[J]. ,J. Vac. Sci. Tec.B1999,17:989.
  • 5彭英才,何宇亮,刘明.PECVD生长nc-Si∶H膜的沉积机理分析[J].真空科学与技术,1998,18(4):283-288. 被引量:16
  • 6Huisken F, Kohn B, Paillard V. Structured films of light-emitting siliconnanoparticals produced by duster beam deposition[J]. Appl. Phys. Lett., 1999,74: 3776.
  • 7Tong J. F,Hsao H. L, Hwang H L. Adjustable emissions from silicon-rich oxide filmsprepared by plasma-enhanced chemical-vapor deposition[J], Appl. phys. Lett, 1999,74: 2316.
  • 8彭英才,傅广生,韩理,李晓苇,杜会静.硅基纳米微粒的激光烧蚀沉积及可见光发射特性[J].激光与红外,2000,30(2):91-94. 被引量:5
  • 9Yoshida T,Takeyama S.,yamadar Y,et al. Nanometer-sized silicon crystallitesprepared by excimer laser ablation in onstant pressure inert gas[J]. Appl. Phys. Lett.,1996,75:75.
  • 10Muramoto J, Sakamoto I, Nakala Y., et al., Influence of electric field on thebehavior of Si nanparticals generated by laser ablation[J]. Appl. Phys. Lett.,1999,75:751.

二级参考文献14

  • 1何宇亮 余明斌 等.-[J].自然科学进展,1996,6:700-700.
  • 2何宇亮 殷晨钟 等.-[J].半导体学报,1992,13:683-683.
  • 3Zhu M,J Appl Phys,1998年,83卷,5386页
  • 4Song Tong,Appl Phys Lett,1997年,71期,698页
  • 5Zheng B,Appl Phys Lett,1994年,64期,2842页
  • 6Tang Y S,Superlattices Microstructures,1996年,20卷,505页
  • 7Wang G,Appl Phys Lett,1994年,64卷,2815页
  • 8He Y L,Yin C Z,Wang L C et al. J Appl Phys ,1994; 75:797.
  • 9Bai C L ,Wang Z H ,Dai C C et al, J Vae Sci Technol,1993; B12:1823.
  • 10彭英才.河北大学学报:自然科学版,1997,17:34-34.

共引文献28

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部