期刊文献+

二氧化锆薄膜的AFM研究 被引量:1

AFM Study of Zirconia Films
下载PDF
导出
摘要 本文采用溶胶-凝胶工艺在玻璃基体表面制备了一、二、三层ZrO2薄膜。X射线衍射(XRD)分析表明,经500℃烧结热处理后ZrO2的晶体结构为单斜相和四方相的混合相。通过原子力显微镜(AFM)对ZrO2薄膜的厚度和表面形貌进行研究表明,一、二、三层ZrO2薄膜的厚度分别约为50nm、80nm和100nm;并且,随着薄膜厚度的增加,ZrO2薄膜表面由多孔结构变为紧密、均匀分布的颗粒状结构,薄膜的表面粗糙度也逐渐减小。 Zirconia films with one, two and three layers are prepared on glass surface using the sol-gel technique. The X - ray diffractometer ( XRD ) analyses indicate that after sinterin8 at 500℃, the crystal structure of Zirconia consist of monoclinic and tetragonal phase. The atomic force microscope ( AFM ) was employed to examine the thickness and surface morphology of Zirconia films. The results show that the thickness of Zirconia films with one, two and three layers are about 50hm, 80hm and 100nm, respectively. As the film thickness increase, the porous structure of zirconia films change into compact and uniform granular structure, and the surface roughness of Zirconia films also decrease.
出处 《内蒙古工业大学学报(自然科学版)》 2012年第3期15-19,共5页 Journal of Inner Mongolia University of Technology:Natural Science Edition
基金 内蒙古自治区高等学校科学技术研究项目资助课题(NJ10075) 高等学校博士学科点专项科研基金资助课题(20111514120004)
关键词 二氧化锆薄膜 溶胶-凝胶 AFM Zirconia films sol - gel AFM
  • 相关文献

参考文献4

二级参考文献37

  • 1阎志军,王印月,徐闰,蒋最敏.电子束蒸发制备HfO_2高k薄膜的结构特性[J].物理学报,2004,53(8):2771-2774. 被引量:18
  • 2徐耀,吴东,孙予罕,李志宏,董宝中,吴中华.小角x射线散射法研究氧化硅溶胶的制备环境依赖性[J].物理学报,2005,54(6):2814-2820. 被引量:5
  • 3卢红亮,徐敏,丁士进,任杰,张卫.原子层淀积Al_2O_3薄膜的热稳定性研究[J].无机材料学报,2006,21(5):1217-1222. 被引量:16
  • 4M.J. Paterson, P. J. K. Paterson, B. Ben-Nissan. The dependence of structure and mechanical properties on film thickness in solgel zirconia films[J]. J. Mater. Res., 1998, 13: 388-395.
  • 5B.C. Bunker, P. C. Rieke, B. J. Tarasevich, A. A. Campbel,G. E. Fryxell, G. L. Graff, L. Song, J. W. Virden, G. L.McVay. Ceramic thin-film formation on functionalized interfaces through biomimetic processing[J]. Science, 1994, 264: 48-55.
  • 6M. Agarwal, M. D. Guire, and A. H. Heuer. Synthesis of ZrO2and Y2O3-doped ZrO2 thin films using self-assembled monolayers [J].J Am Ceram.Soc,1997,80:2967-2981.
  • 7S.C. Moulzolf, Y. Yu, D. J. Frankel, R. J. La. Properties of ZrO2 films on sapphire prepared by electron cyclotron resonance oxygen-plasma-assisted depoition[J]. J. Vac. Sci. Technol., 1997,A15: 1211-2097.
  • 8K.A. Ritley, K-P. Just, F. Schreiber, H. Dosch, T. P. Niesen,F. Aldinger. X-ray reflectivity study of solution-deposited ZrO2 thin films on self-assembled monolayer: Growth, interface properties, and thermal densification[J]. J. Mater. Res., 2000, 15: 2706-2713.
  • 9A. M. Wr6bel, A. Walkiewicz-Pietrzykowska, D. M. Bielinski, J.E. Klemberg-Sapieha, Y. Nakanishi, T. Aoki, Y. Hatanaka, Remote hydrogen plasma chemical vapor deposition from (dimethylsilyl)(trimethylsilyl) methane. 2. property-structure relationships for resulting silicon-carbon films[J]. Chem. Mater., 2003, 15: 1757-1762.
  • 10Wallace R M.Appl.Surf.Sci.,2004,231-232:543-551.

共引文献14

同被引文献11

引证文献1

二级引证文献6

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部