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Detached Phenomenon and Its Effect on the Thallium Composition into InSb Bulk Crystal Grown by VDS Technique 被引量:1

Detached Phenomenon and Its Effect on the Thallium Composition into InSb Bulk Crystal Grown by VDS Technique
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机构地区 Department of Physics
出处 《材料科学与工程(中英文A版)》 2012年第9期593-601,共9页 Journal of Materials Science and Engineering A
关键词 定向凝固技术 晶体生长 锑化铟 VDS 分离 块状 组成 最佳工艺条件 Detached phenomenon, bulk growth from melt, compound semiconductors, InSb: TI, crystal properties.
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参考文献34

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