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PtSi红外探测器材料制备技术

The Preparing Techniques of Materials for PtSi Infrared Detector
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摘要 介绍了溅射、分子束外延、脉冲激光沉积和激光分子束外延等 Pt Si薄膜的制备方法及应用进展。着重介绍了脉冲激光沉积和激光分子束外延技术的原理及特点。 In the paper,the preparing techniques of PtSi thin film and their applied progresses are introduced,including the sputtering,molecular beam epitaxy(MBE),pulsed laser deposition(PLD),laser molecular beam epitaxy(L MBE).Especially,the principles and unique characteristics of PLD and L MBE are described.
出处 《激光与红外》 CAS CSCD 北大核心 2000年第4期234-237,共4页 Laser & Infrared
关键词 红外探测器 纳米薄膜 PTSI infrared detector nanometer thin film pulsed laser deposition laser molecular beam epitaxy.
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参考文献9

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