过渡金属氧化物自旋和电荷相关信息存储

Spin and charge related data storage in transition metal oxides

信息技术的快速发展在某种程度上要求有高速度和大容量的非易失存储器.然而,随着晶体管尺度达到其量子极限,传统硅半导体器件的继续集成化发展遇到了瓶颈.因此,人们提出了一系列有潜力成为下一代更具功能性的存储器原型器件,并引起了广泛而持续的研究热潮.本文介绍3种基于新材料和新结构的新型存储原型器件:阻变开关器件、有机自旋阀和多铁隧道结.我们发现通过改变界面态,可将阻变式开关器件的反应速度提高数个量级,达到5ns;在实验上确认了超精细相互作用对自旋阀效应的影响;利用多铁隧道结实现了室温下的四重阻态存储.基于自旋、电荷相关信息存储的原理和实验结果,我们对这3种过渡金属氧化物器件目前还存在的问题及未来的应用前景进行了分析和讨论.

Rapid developments in information technology rely to some extent on the high speed and large capacity of nonvolatile memories.However,as transistor dimensions reach quantum regime,the diminishing scaling benefit makes conventional semiconducting devices encounter insurmountable bottlenecks.A number of potential alternatives have been proposed and extensively studied to obtain more powerful and functional nonvolatile memory devices.In this article,several candidates based on new materials,structures and properties of prototype devices,such as resistance switching（RS） device,organic spin valve（OSV） and multiferroic tunneling junction（MFTJ）,are reported.It is noted that the response time of RS prototype device was increased by several orders to 5 ns through manipulating the interface state of the system;the crucial role of hyperfine interaction in OSV was experimentally confirmed by isotope effect;and room temperature four-resistive device was achieved in MFTJ.In addition,the current issues and future researches for promising spin,charge related data storage in transition metal oxides are discussed on the basis of these experimental results.