化学刻蚀制备黑硅材料的研究现状及展望

The Current Status and Prospects of Black Silicon Prepared by Chemical Etching

基于黑硅材料的发展,讨论了国内外化学刻蚀制备黑硅的研究进展,包括掩膜辅助、金属离子辅助化学刻蚀。结果表明,黑硅材料的表面特殊结构能够有效降低硅表面的反射率,从而提高太阳能电池转换效率。此外,化学刻蚀法制备黑硅简便易行、成本低廉,高效可靠,具有良好的发展前景。

Based on the development of black silicon, research progress in preparation black silicon using chemical etching is discussed, including template assisted and metal assisted chemical etching. The results show that a rough surface can be fabricated easily by metal-assisted chemical etching of silicon, and the micro nano surface struc- ture of black silicon could effectively reduce the surface reflection and improve the conversion of silicon solar cells. Furthermore, metal especially noble metal assisted chemical etching is simple, feasible, inexpensive, efficient and re- liable, so it has favourable development prospects.