大功率半导体开关RSD触发导通特性的实验研究

Experimental Investigation on Triggering and Conducting Characteristic of High Power Semiconductor Switch RSD

大功率半导体开关RSD是目前通流能力最强的半导体开关之一,它具有电流上升率高、导通损耗小的特点。触发参数是影响RSD导通状况的主要因素之一;本文通过实验研究了不同触发电流脉宽、幅值对RSD导通状况的影响,得出了2μs、1μs、500ns和250ns四种触发脉宽下RSD峰值导通压降随触发电荷量的变化曲线,分析了250ns触发脉宽下RSD导通不充分的原因,实验结果表明临界触发电荷量计算公式中比例系数随触发脉宽增加而增大。

High power semiconductor switch reversly switched-on dynistor（RSD） is one of the semiconductor devices with the largest conductive current capability,and features high di/dt and low power dissipation.Trigger parameters are main factors which have considerable impact on conducting state of RSD.Influence of different amplitudes and pulse widths of trigger current on conducting state is investigated by experiments.Curves of peak switching voltage of RSD as a function of trigger charge with four different pulse widths of trigger current,2μs,1μs,500ns and 250ns are obtained,and cause of ununiform switching under 250ns pulse width is discussed.It’s shown that proportion factor in critical trigger charge equation increases with trigger pulse width increment.