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基于正交设计的BiMOS运算放大器瞬时电离辐射效应影响因素分析 被引量:2

Analysis of Affecting Factors of Transient Ionizing Radiation Effects on BiMOS Op-amp by Orthogonal Design
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摘要 利用正交设计法设计了实验方案,可通过较少的实验获得满意的实验结果。在"强光一号"上对BiMOS工艺运算放大器CA3140进行了瞬时电离辐射效应实验,研究了不同因素对CA3140输出端瞬时电离辐射扰动恢复时间的影响,得到不同因素对恢复时间产生影响的主次顺序和显著水平,以及运算放大器在瞬时电离辐射环境下的最劣偏置条件。 Using the orthogonal design method to arrange tests,a satisfactory result can be acquired with less experiments.The transient ionizing radiation effects experiments on BiMOS op-amp CA3140 were done on "Qiangguang-1" accelerator in this work to study the impact of different factors on the recovery time of CA3140 by transient ionizing irradiation.The sub-sequence and the significant level of the factors for the recovery time,as well as the worst bias conditions for CA3140 under transient ionizing irradiation were obtained.
出处 《原子能科学技术》 EI CAS CSCD 北大核心 2012年第B09期592-597,共6页 Atomic Energy Science and Technology
关键词 正交设计 瞬时电离辐射 BIMOS 最劣偏置 orthogonal design transient ionizing irradiation BiMOS worst bias
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参考文献6

  • 1NICHOLS J S, ALEXANDER D R, HITTING- ER G H. Characterization and modeling of the 709 integrated circuit operational amplifier[J]. IEEE Trans Nucl Sci, 1969, 16(6): 172-176.
  • 2JOSEPH R F, ROBERT W J. Improved transi- ent response modeling in ICs[J]. IEEE Trans Nucl Sci, 1984, 31(6): 1 402-1 405.
  • 3王桂珍,龚建成,姜景和,吴国荣,林东升,常冬梅.电子元器件及电路的剂量率效应测试技术研究[J].微电子学,2001,31(2):130-134. 被引量:10
  • 4DAVID R A. Transient ionizing radiation effects in devices and circuits[J]. IEEE Trans Nucl Sci, 2003, 50(3): 565-582.
  • 5AGAKHANYAN T M. Current-feedback opera- tional amplifier: Some features of its transient ra- diation response[J] Russian Microelectronics, 2008, 37(1) 55-61.
  • 6马强,林东生,范如玉,陈伟,杨善潮,龚建成,王桂珍,齐超.瞬时电离辐射剂量率对BiMOS运放输出扰动时间的影响[J].原子能科学技术,2010,44(B09):545-549. 被引量:7

二级参考文献15

  • 1陆妩,任迪远,郭旗,余学峰,艾尔肯.运算放大器不同剂量率的辐射损伤效应[J].Journal of Semiconductors,2005,26(7):1464-1468. 被引量:9
  • 2李培俊.半导体器件γ瞬时辐照效应研究.抗辐射加固技术研究1986-1990年部分成果集[M].西安:西北核技术研究所,1993.103-123.
  • 3李培俊.半导体二极管的瞬时辐照效应.抗核辐射电子学第二次学术交流会文集[M].无锡,1984..
  • 4谢泽元.晶体管的瞬时辐照效应.抗核辐射电子学第二次学术交流会文集[M].无锡,1984..
  • 5FLEETWOOD D,GALLOWAY K,MASSENGILL L.Muri-overview 2003[R].[S.l.]:[s.n.],2003.
  • 6DAVID M,HIEMSTR A.Guide to the 2007 IEEE radiation effects data workshop record[J].IEEE REDW,2008:146-152.
  • 7NICHOLS J S,ALEXANDER D R,HITTINGER G H.Characterization and modeling of the 709 integrated circuit operational amplifier[J].IEEE Trans Nucl Sci,1969,NS-16:172.
  • 8WUNSCH T F,AXNESS C L.Modeling the time-dependent transient radiation response of semiconductor junctions[J].IEEE Trans Nucl Sci,1992,NS-39:2 158-2 169.
  • 9DAVID R A.Transient ionizing radiation effects in devices and circuits[J].IEEE Trans Nucl Sci,2003,50(3):565-582.
  • 10FJELDLY T A.Modeling of high-dose-rate transient ionizing radiation effects in bipolar devices[J].IEEE Trans Nucl Sci,2001,48:1 721-1 730.

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