摘要
本文以建立的EE80C196KC20型单片机运行系统为研究对象,在"强光一号"加速器上,对系统中的LM7805型电源芯片和EE80C196KC20型单片机进行了脉冲γ辐射效应实验研究,获得了单片机的闩锁阈值,得到了功耗电流、I/O输出随剂量率的变化规律,从实验上证实了电源芯片对单片机脉冲γ辐射闩锁效应的抑制作用。
An experimental result of power chip LM7805 and microcontroller EE80C196KC20 based on the EE80C196KC20 testing system was presented.The pulse gamma ray radiation effect was investigated using ＂Qiangguang-Ⅰ＂ accelerator.Latchup threshold of the microcontroller was obtained,and the relationship of supply current and I/O output with the transient dose rate was observed.The result shows that the restrainability of power chip on pulse gamma ray radiation induces microcontroller latchup effect.
出处
《原子能科学技术》
EI
CAS
CSCD
北大核心
2012年第B09期602-606,共5页
Atomic Energy Science and Technology
关键词
脉冲γ辐射
单片机系统
闩锁
瞬时扰动
pulse gamma ray radiation
microcontroller system
latchup
transient disturbance
