低成本电化学法制备RE_2Zr_2O_7缓冲层

Fabricating RE_2Zr_2O_7 Buffer Layers by Low Cost Electrodeposition

为了降低第二代高温超导涂层导体的制备成本,采用电化学法(ED),在双轴织构的Ni-5at%W(Ni-5W)金属基带上分别成功制备出了具有较好c轴取向的La2Zr2O7(LZO)和Gd2Zr2O7(GZO)缓冲层.通过与磁控溅射方法(MS)相结合,制备出MS-CeO2/ED-RE2Zr2O7双层结构,用以取代完全用磁控溅射方法(MS)制备的多层缓冲层结构.电化学法得到的60 nm LZO缓冲层的面内和面外织构半高宽分别为7.2°和6.8°,同样厚度的GZO缓冲层的面内和面外半高宽分别为6.7°和5.8°.之后用脉冲激光沉积(PLD)在ED-LZO/Ni-5W,ED-GZO/Ni-5W,MS-CeO2/ED-LZO/Ni-5W三种结构的缓冲层上分别制备出具有超导性能的YBa2Cu3O7-δ(YBCO)超导层.

Electrodeposition （ED）, a novel and low cost method for epitaxial growth of La2Zr2O7 （LZO） and Gd2Zr2O7 （GZO） buffer layers on the biaxially textured Ni-5at%W （Ni-5W） substrate, was successfully developed to reduce the production cost of the second generation high temperature coated conductors. Combined with magnetron sputtering （MS） method, the architecture of MS-CeO2/ED-RE2Zr2O7 was obtained to replace the multi- layers deposited only by MS system. Using electrodeposition, the full-width at half maximum （FWHM） values of phi （Ф） scans （in-plane texture） and omega （w） scans （out-of plane texture） are 7.2° and 6.8°, respectively, for a typical LZO layer with 60 nm thickness. The corresponding values are 6.7° and 5.8° for 60 nm-thick GZO layers fabricated by the same method. YBa2Cu3OT-δ （YBCO） films with superconducting transitions are subsequently ob- tained on ED-LZO/Ni-5W, ED-GZO/Ni-5W and MS-CeO2/ED-LZO/Ni-5W structures by using pulsed-laser depo- sition （PLD） system.