以ILTO为阳极的高效有机电致发光器件

High-performance Organic Light-emitting Diodes Based on ILTO Thin Film

以高功函数的掺杂钛酸镧的氧化铟薄膜(ILTO)及氧化铟锡(ITO)作为阳极,制备了Glass/anode/NPB/Alq3/LiF/Al结构的有机电致发光器件。得益于ILTO较好的掺杂性、低的表面粗糙度、高的可见光透过率以及高的有效功函数,以ILTO为阳极的有机电致发光器件的开路电压得到降低,最高亮度、电流效率、功率效率以及外量子效率均获得了成倍的提高。研究结果表明,ILTO是一种潜在的光学窗口材料,有望在各种光电器件中得到广泛的应用。

OLEDs were fabricated with a structure of anode（ILTO or ITO）/NPB（70 nm）/Alq3（60 nm）/LiF（1 nm）/Al（100 nm）.NPB and tris（8-hydroxyquinoline） aluminum（Alq3） were used as hole transport layer and light emitting layer,respectively.A buffer layer of lithium fluoride（LiF） capped with aluminum（Al） was used as a cathode.Comparing with ITO-anode device,the luminance,current efficiency,power efficiency,and external quantum efficiency（EQE） are obviously enhanced in ILTO-anode device.Simultaneously,the turn-on voltage（2.1 V） is decreased in combination with a better rectifying behavior.The significant improvement in the EL performance indicates that the high-work-function ILTO anode can not only lower the hole-injection barrier,but also leads to a better charge balance in OLEDs.The effects of high work function afford more opportunities to develop and optimize the performance of organic photoelectric devices,and facilitate the fabrication process of devices.