H_2^+杂质半导体量子点基态能级的量子尺寸效应

Quantum Size Effects on H_2^+ Impurites Semiconductor Quantum Dot Ground Energies

用B样条技术计算H2+杂质半导体量子点基态能级的量子尺寸效应.计算结果显示:当量子点半径R较小时,基态能级E对两核距离D的变化很敏感,E-D曲线上升快;当R较大时,E-D曲线上升变缓,基态能级对D的变化敏感度下降.在R较小的区域,E-R曲线下降较快,量子尺寸效应显著.在R较大的区域,E-R曲线下降速度变缓,量子尺寸效应减弱.

Quantum size effects on H2 ＋ impurites semiconductor quantum dot ground energies with Bspline technology have been found. The calculated results show. When quantum dot radia R is small, the quantum dot energy curves E--D rise quickly, and the ground energies are sensitive to distence of the two nucleus D; While R becomes larger, the quantum dot energy curves E--D rise slowly, and the ground energies are not sensitive to D clearly. On the other hand,R is in small region, the quantum dot energy curves E--R decrease quickly with quantum dot radia R increasing, the quantum size effects are clear, while quantum dot radia R becomes larger, the quantum dot energy curves E--R decrease slowly, and the quantum size effects are not clear.