锗 -二氧化硅复合薄膜的光电特性(英文)

OPTICAL AND ELECTRICAL PROPERTIES OF Ge-SiO_2 COMPOSITE FILMS 

采用射频共溅射技术在石英玻璃和硅片衬底上制备出Ge SiO2 复合薄膜 ,然后在真空气氛中进行热处理。利拉曼散射、X射线衍射、UV/VIS/NIR透射和反射谱、变温电导测试等手段对薄膜的光、电特性进行了研究。实验结果表明 ,用热处理的方法可以在薄膜中形成Ge纳米颗粒 ,Ge纳米颗粒的平均尺度约 5 .0nm时 ,薄膜的光学带宽约 1.42ev ,电导激活能的最小值约 0 .43ev。

Ge SiO 2 composite films have been prepared on quartz glass substrates and silicon(100)wafers by rf cosputtering technique and post annealing treatment in vacuum atmosphere.Using Raman scattering,X ray diffraction,UV/VIS/NIR transmittance and reflectance spectroscopy,and conduction temperature measurements, the optical and electrical properties of the films are investigated.The results show that Ge nanocrystals in the films could be formed by thermal annealing. As the size of nc Ge in the films reaches about 5.0nm,the efficient optical band gap of the films is found to shift to higher energy of 1.42ev,the conduction excitation energy of the films is minimun about 0.43ev.