长周期掺杂超晶格GaAs/Al_xGa_(1-x)As红外吸收的研究

Infrared Absorption of Long Period Doping Superlattice-GaAs/Al_xGa_(1-x)As

目的 研究长周期掺杂超晶格 Ga As/Alx Ga1 - x As红外吸收的特性 ,尤其在 1 0 .6μm处的红外吸收 .方法 在有效质量的基础上 ,计算 Ga As/Alx Ga1 - x As系列超晶格材料能带及带间光吸收谱 .结果 发现当 Ga As/Al0 .3Ga0 .7As的周期层厚为 1 8nm,Ga As层厚为 3nm时 ,在 1 0 .6μm处有一强的红外吸收峰 .

Aim\ To study the infrared absorption properties of GaAs/Al\-\%x\%Ga\-\{1-\%x\%\}As superlattice, especially at 10.6 μm. Methods\ Calculating the energy band structure and infrared absorption coefficients within the frame work of effective mass. Results\ There exists a strong infrared absorption at 10.6 μm in GaAs/Al\-\{0.3\}Ga\-\{0.7\}As superlattice when the width of potential barrier is 3 nm and the period is 18 nm. Conclusion\ This kind of superlattices can be well used as infrared absorption materials.