LPCVD制备多晶Si薄膜的工艺和性能分析

Growth and properties of poly-Si thin film deposited by LPCVD

文章利用低压化学气相沉积法(LPCVD),在单晶Si衬底上制备多晶Si薄膜。利用原子力显微镜观察薄膜厚度和镀膜温度对多晶Si薄膜表面形貌的影响,并利用XRD研究退火温度对多晶Si薄膜结晶性能的影响。结果表明:镀膜温度越高、薄膜越厚,薄膜的晶粒尺寸越大;退火温度越高,薄膜的结晶越好。

Poly-Si thin film is deposited on single crystalline silicon by low pressure chemical vapour deposition（LPCVD）. The influence of the thickness of the film and the deposition temperature on the surface morphology of poly-Si thin film was studied by using the atomic force microscope, and the in- fluence of the annealing temperature on the crystallinity of poly-Si thin film was studied by using X- ray diffraction（XRD）. The results indicate that the higher the deposition temperature, the thicker the film and the bigger the grain size; the higher the annealing temperature, the better the crystallinity of the film.