摘要
本文用X射线及电子衍射结构分析对金刚石和石墨单晶表面覆盖沉积铬进行了研究。将细颗粒金刚石或者高定向石墨片埋在经真空去气处理的电解铬粉中,在10^(-5)—10^(-6)Torr真空条件下,经高于900℃热处理,在金刚石及高定向石墨表面外延生长了Cr_3C_2和Cr_7C_3。 对碳化铬生长的条件及覆盖沉积外延生长的物理机制进行了讨论。
The cover-deposition chromium on diamond and graphite single crystal surfaces using X-ray and electron diffraction structure analysis technique have been studied. Under the condition of vacuum of 10^(-5) to 10^(-6) torr and the temperature higher than 900? while the small grain diamonds or highly oriented graphite platelets hid in electrolytic chromium powder, the Cr_3C_2 and Cr7C3 can be epitaxially grown on diamond or graphite surfaces.
In this paper, we discuss the growth condition of chromium carbide and the physical mechanism of cover-deposition epitaxial growth.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1990年第6期963-969,T001,共8页
Acta Physica Sinica
基金
国家自然科学基金
