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晶体硅太阳电池烧结工艺优化 被引量:1

Sintering Processes Optimization of Crystalline Silicon Solar Cell
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摘要 金属电极与硅的接触电阻是影响太阳电池填充因子和短路电流进而影响光电转换效率的重要因素之一。首先对晶体硅太阳电池的烧结工艺进行了优化,利用平台式烧结温度曲线代替陡坡式烧结温度曲线。然后,采用Core Scan方法测试工艺优化前后晶体硅太阳电池丝网印刷烧结银电极与硅之间的接触电阻Rc,并测试了工艺优化前后电池片的IV特性。数据显示烧结工艺优化后可减小银电极与硅的接触电阻,从而提高了太阳电池的光电转化效率。平台式烧结温度曲线更适用浅结高方阻的电池结构。 The contact resistance between a metal electrode and silicon is one of the important factors which influence solar cell fill factor, short circuit current and electro-optic conversion efficiency. By optimizing the sin- tering technique of crystal silicon solar cell, the platform-based sintering temperature curve with steep is replaced by the sintering temperature curve. The Core Scan method is used to test the contact resistance P~ between sinter- ing silver electrode of crystal silicon solar cell and silicon before and after technique optimizing process. And IV characteristic battery plate is tested before and after technique optimizing process. The test results show that the optimized sintering technique can reduce the contact resistance between silver electrode and silicon. So elec- tro-optic conversion efficiency of solar cell is improved. The platform-based sintering temperature curve is much more suitable for high efficiency shallow junction silicon cell structure.
出处 《光电技术应用》 2012年第5期40-42,55,共4页 Electro-Optic Technology Application
基金 国家863项目(2011AA050502)
关键词 太阳电池 接触电阻 烧结曲线 光电转换效率 solar cell contact resistance sintering curve electro-optic conversion efficiency
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  • 1L J Caballero, P S6nchez-Fricra, B Lalaguna, et al. Series resistance modeling of industrial screen-printed monocrys- talline silicon solar cells anti modules including the effect of spot soldering[C]// IEEE Solar Cell Processing. 2006: 1388-1391.
  • 2P N Vinod. Specific contact resistance and metallurgical pro- cess of the silver based paste for making ohmic contact struc- ture on the porous silicon/p-Si surthce of tile silicon solar cell[J]. Journal of Materials Science: Materials in Electron- ics. 2010, 21(7): 730-736.
  • 3刘祖明,苏里曼.K.特拉奥雷,林理彬,张忠文,陈庭金,廖华,罗毅.晶体硅太阳电池丝网印刷电极接触电阻及其测量[J].太阳能学报,2003,24(5):659-662. 被引量:20
  • 4A T Fiory. Recent Developments ill Rapid Thermal Process- ing[J]. Journal of Eh+ctronic Materials, 2002, 31:981-987.
  • 5C kbadilkar, A sheikh, S Sridharan. Characterization of Alu- rninum Back Contaet in a Silicon Solar Cell[C]//15th Interna- tional Photovohaic Science & Engineering Conference (PV- SEC- 15 ).Shanghai China, 2005, 47( 3 ): 705.
  • 6孙国辉,晏石林,陈刚.太阳电池电极与铝背场烧结过程的数值模拟分析[J].系统仿真学报,2008,20(22):6103-6105. 被引量:4
  • 7J Tan, A Cuevas, D Baetzner, et al. Examination of Sereen Printed Alumiuium Back Surface Fields for Silicon Solar Cells[C]//Destination Renewables-ANZSES, 2006: 1-6.
  • 8P N Vinod. Specific contact resistance of the porous siliconand silver metal ohmic contact structure[J]. Semiconductor Science and Technology, 2005, 20:966-971.
  • 9P N Vinod. Evaluation of the ohmic properties of the silver metal contacts of an improved sintering process on the multi- crystalline silicon solar cells[C]//Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on, 2007, 953-956.
  • 10A S H van der Heide, A Schonecker, G P Wyers, et al. Mapping of contact Resistance and locating shunts on solar ceils using resistance analysis by mapping of potential (RAMP) techniques[C]//Proceedings of the 16 th Europe-an Photovohaic Solar Energy,2000.

二级参考文献4

  • 1EH罗德里克著 周章文 齐学参译.金属不同接触[M].北京:科学出版社,1984..
  • 2J D Alamo, J Eguren, A Luque. Operating limits of Al-alloyed high-low junctions for BSF solar cells. [J]. Solid-State Electronics (S0038-1101), 1981, 24(5): 415-420.
  • 3J A Amick, F J Bottari, J Hanoka. The effect of aluminum thickness on solar cell performance [J]. J. Electrochem. Soc (S0013-4651), 1994, 141(6): 1577-1585.
  • 4施正荣.晶体硅太阳能电池的现状和发展[C]//中国第七界光伏会议.杭州,2002:350.

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