摘要
A novel short-anoded insulated-gate bipolar transistor（SA-IGBT） with double emitters is proposed.At the on-state,the new structure shows extraordinarily high emission efficiency.Moreover,with a short-contacted anode,it further enhances the hole emission efficiency because of the crowding of the electrons.The forward voltage drop V_F of this structure is 1.74 V at a current density 100 of A/cm^2.Compared to the conventional NPT IGBT（1.94 V）,segment-anode IGBT（SA-NPN 2.1 V）,and conventional SA-IGBT（2.33 V）,V_F decreased by 10%,17%and 30%,respectively.Furthermore,no NDR has been detected comparing to the SA-IGBT.At the off-state, there is a channel for extracting excessive carriers in the drift region.The turn-off loss E_（off） of this proposed structure is 8.64 mJ/cm^2.Compared to the conventional NPT IGBT（15.3 mJ/cm^2）,SA-NPN IGBT（12.8 mJ/cm^2）, and SA-IGBT（12.1 mJ/cm^2）,E_（off） decreased by 43.7%,32%and 28%,respectively.
A novel short-anoded insulated-gate bipolar transistor（SA-IGBT） with double emitters is proposed.At the on-state,the new structure shows extraordinarily high emission efficiency.Moreover,with a short-contacted anode,it further enhances the hole emission efficiency because of the crowding of the electrons.The forward voltage drop V_F of this structure is 1.74 V at a current density 100 of A/cm^2.Compared to the conventional NPT IGBT（1.94 V）,segment-anode IGBT（SA-NPN 2.1 V）,and conventional SA-IGBT（2.33 V）,V_F decreased by 10%,17%and 30%,respectively.Furthermore,no NDR has been detected comparing to the SA-IGBT.At the off-state, there is a channel for extracting excessive carriers in the drift region.The turn-off loss E_（off） of this proposed structure is 8.64 mJ/cm^2.Compared to the conventional NPT IGBT（15.3 mJ/cm^2）,SA-NPN IGBT（12.8 mJ/cm^2）, and SA-IGBT（12.1 mJ/cm^2）,E_（off） decreased by 43.7%,32%and 28%,respectively.
基金
supported by the National Natural Science Foundation of China(Nos.60806025,61076082)
