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Planarization properties of an alkaline slurry without an inhibitor on copper patterned wafer CMP 被引量:17

Planarization properties of an alkaline slurry without an inhibitor on copper patterned wafer CMP
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摘要 The chemical mechanical polishing/planarization(CMP) performance of an inhibitor-free alkaline copper slurry is investigated.The results of the Cu dissolution rate(DR) and the polish rate(PR) show that the alkaline slurry without inhibitors has a relatively high copper removal rate and considerable dissolution rate.Although the slurry with inhibitors has a somewhat low DR,the copper removal rate was significantly reduced due to the addition of inhibitors(Benzotriazole,BTA).The results obtained from pattern wafers show that the alkaline slurry without inhibitors has a better planarization efficacy;it can planarize the uneven patterned surface during the excess copper removal.These results indicate that the proposed inhibitor-free copper slurry has a considerable planarization capability for CMP of Cu pattern wafers,it can be applied in the first step of Cu CMP for copper bulk removal. The chemical mechanical polishing/planarization(CMP) performance of an inhibitor-free alkaline copper slurry is investigated.The results of the Cu dissolution rate(DR) and the polish rate(PR) show that the alkaline slurry without inhibitors has a relatively high copper removal rate and considerable dissolution rate.Although the slurry with inhibitors has a somewhat low DR,the copper removal rate was significantly reduced due to the addition of inhibitors(Benzotriazole,BTA).The results obtained from pattern wafers show that the alkaline slurry without inhibitors has a better planarization efficacy;it can planarize the uneven patterned surface during the excess copper removal.These results indicate that the proposed inhibitor-free copper slurry has a considerable planarization capability for CMP of Cu pattern wafers,it can be applied in the first step of Cu CMP for copper bulk removal.
出处 《Journal of Semiconductors》 EI CAS CSCD 2012年第11期134-138,共5页 半导体学报(英文版)
基金 supported by the Major National Science and Technology Special Projects,China(No.2009ZX02308) the Tianjin Natural Science Foundation of China(No.lOJCZDJC 15500) the National Natural Science Foundation of China(No.10676008) the Fund Project of Hebei Provincial Department of Education,China(No.2011128)
关键词 planarization alkaline copper slurry inhibitor free copper pattern wafer planarization alkaline copper slurry inhibitor free copper pattern wafer
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参考文献10

  • 1Zantye P B, Kumar A, Sikdar A K. Chemical mechanical planarization for microelectronics applications. Mater Sci Eng R, 2004,45: 89.
  • 2Jinda A, Babu S V. Effect of pH on CMP of copper and tantalum. J Electrochem Soc, 2004, 151(10): 709.
  • 3Chiu S Y, Wang Y L, Liu C P, et al. High-selectivity damascene chemical mechanical polishing. Thin Solid Films, 2006, 498: 60.
  • 4Nguyen V H, Daamen R, Hoofman R. Impact of different slurry and polishing pad choices on the planarization efficiency of a copper CMP process. Microelectron Eng, 2004, 76: 95.
  • 5Pandija S, Roy D, Babu S V. Achievement of high planarization efficiency in CMP of copper at a reduced down pressure. Microelectron Eng, 2009, 86: 367.
  • 6Prasad Y N, Ramanthan S, Chemical mechanical planarization of copper in alkaline slurry with uric acid as inhibitor. Electrochim-ical Acta, 2007, 52: 6353.
  • 7Cojocaru P, Muscolino F, Magagnin L. Effect of organic additives on copper dissolution for e-CMP. Microelectron Eng, 2010, 87: 2187.
  • 8Lee H, Park B, Jeong H. Influence of slurry components on uniformity in copper chemical mechanical planarization. Microelectron Eng, 2008, 85: 689.
  • 9Nagar M, Vaes J, Eli Y E. Potassium sorbate as an inhibitor in copper chemical mechanical planarization slurries. Part II: effects of sorbate on chemical mechanical planarization performance. Electrochimica Acta, 2010, 55: 2810.
  • 10Yang J C, Oh D W, Lee G W, et al. Step height removal mechanism of chemical mechanical planarization (CMP) for sub-nano-surface finish. Wear, 2010, 268: 505.

同被引文献107

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  • 6PANDIJA S, ROY D, BABUS V. Achievement of high planarization efficiency in CMP of copper at a reduced down pressure []]. Microelectronic Engineering, 2009, 86 (3): 367-373.
  • 7CHANG S H. A dishing model for chemical mechanical polishing of metal interconnects structures [ J]. Microelectrnnic Engineering, 2005, 77 ( 1 ) : 76 - 84.
  • 8QIN K, MOUDGIL B, PARK C W. A chemical mechanical polishing model incorporating both the chemical and mechanical effects [ Jl. Thin Solid Films, 2004, 446 (2): 277-286.
  • 9PRASAD Y, RAMANATHAN S. Chemical mechanical planarization of copper in alkaline slurry with uric acid as inhibitor [ J]. Electrochimica Acta, 2007, 52 (22) :.
  • 10MAHADEVAIYER K, JAKUB W, LEE M. Chemical mechanical planarization: slurry chemistry, materials and mechanisms []]. Chemical Reviews, 2010, |10 (1): 179-201.

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