硅高压功率JFET开关性能

Switching Properties of a High-Voltage Power Silicon JFET

本文介绍一种垂直沟道结型场效应晶体管.给出器件的电参数、线性区等效电路、开关参数的测试电路及一些测试结果.对器件的开关参数进行了初步分析与计算.指出,器件的通态电阻R_(on)是涉及本器件开关性能的一个重要参数.最后,给出一例高速脉冲放大器的实际电路.

This paper introduces a vertical channel silicon junction field effect transistor and gives the electrical pcoperties, the equivalent circuit in linear region and the switching test circuits of the device. Some test results are presented, analysed and roughly calculated, which indicates that the on-rcsistance of the device is believed to play an important role in the switching behavior of the device. Finally, a high speed pulse amplifier circuit is sketched.