宽温区低漂移集成运算放大器

An Integrated Operational Amplifier with a Wide Temperature Range and Low Drift

本文将近来研制成功的沟道基区晶体管(Channel Base Transistor,简称CBT)应用于集成运算放大器,展宽了放大器的工作温度范围,且显著减小了其失调及失调温漂等特性.有效地扩展了集成运算放大器的参数指标和应用范围.

An application of a newly developed channel base transistor (CBT) integrated operational amplifier is introduced in this paper. The amplifier shows an widened temperature range, a significant reduction of offset and temperature drift; it also effectively expands the parameter's specifications and application of the conventional integrated operational amplifier.