红外辐照退火硼离子注入硅的后热处理特性研究

Thermal Post-Treatment for Infrared Rapid Isothermal Annealed ^(11)B-Implanted Silicon

本文研究了硼离子注入硅经红外辐照退火后的热处理特性.实验发现,对于20keV,3.5×10^(14)cm^(-2)^(11)B离子注入硅样品,经10秒到几十秒红外辐照后再进行不同温度的后热处理,表面薄层电阻随退火温度呈规律性变化,在1050℃附近达到最小值,此时杂质的电激活率大于100%.

In this paper,thermal post-treatment for infrared rapid isothermal annealed boron-implanted silicon was studied. The results show that the sheet resistivity of the sample changes regularly with the temperature of the thermal post-treatment and reaches the minimum at about 1050℃, with the activation of the implanted dopant being greater than 100%.