摘要
本文使用单带双谷模型和隧道谐振方法计算了电场作用下耦合量子阱和超晶格中的电子态.计算中考虑了能谷的非抛物线性和Г,Х两个能谷的贡献.算得的耦合量子阱能级同实验结果之间吻合良好,并且得出在某些电场下两个阱中的不同能级之间可能产生耦合.对超晶格的计算同样得到了同实验吻合的电场作用下的局域化及电子的带间跃迁能量.在GaAs/AlAs超晶格中还算得了适当电场下的有趣的Г-Х混和现象.
The electronic states in a coupled double-quantum-well and superlattjce are calculated using the one-band two-valley model and the tunnelling resonant method. The non-parabolicity effect of the energy band, the F and X two energy valleys and the contribution from the electric field are involved in this calculation. The computed energy levels in a coupled double-quantum-well agrse well with the experimental results and it is found that the different energy levels in two wells may be coupled each other under some electric field. For the superlattics the localization and the transition energies between the valence band and conduction band are also obtained, which agree with the experimental results. An interesting F-X mixing in the GaAs/AlAs superlattice under an appropriate electric field is also observed.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1990年第3期262-270,共9页
Research & Progress of SSE