摘要
本文提出并成功地试制了一种InP异质结双极型晶体管.其主要特点是利用在半绝缘InP衬底中注硅形成收集区,然后再进行液相外延形成基区和发射区.本结构能有效减少基区一收集区的结电容C_(BC)和寄生电容.避免了薄基区上制作基极欧姆接触时经常发生的基极-收集极之间的短路问题,提高了器件的可靠性结果表明,该器件具有较高的共发射极电流增益(h_(FE)=150～250),并能够双向工作.文章对该结构的优点进行了分析,给出了器件的工艺过程.
A novel InP HBT(heterojunction bipolar transistor) is proposed and evaluated. The main feature of the device is to utilize Si+ implantation to form a collector ia SI-InP substrate on which the base and emitter layers were grown by LPE. A drastical reduction of the parasitic aad junction capacitances between the collector and the base can be obtained from this structure. It also diminishes the risk of the base-collector short circuit during the formation of base contacts, particularly for a very thin base, which improves the reliability of the devices. The device can be bilaterally operated with common emitter current gain hFE of 150-250. The advantages of the device are analized and its fabrication processes are described.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1990年第3期278-282,共5页
Research & Progress of SSE
