摘要
本文介绍制备10μm以下硅膜的新技术——电8化学腐蚀自停止技术.并讨论光照、欧姆接触和pn结空间电荷区等因素对腐蚀特性的影响.
This paper presents a novel technique of processing silicon film of less
than 10μm——electrochemical etching-autostop, and also discusses the influnces of the
material, tight irradiation, ohmic contact and p-n junction space charge region on etching characterization.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1990年第3期316-322,共7页
Research & Progress of SSE
