PECVD法淀积TiSi_2薄膜性质及应用研究

A Study on Properties and Applications of TiSi_2 Thin Film Prepared by PECVD

利用平板电容耦合式PECVD设备淀积TiSi_2薄膜,经800℃,30分钟的扩散炉退火,TiSi_x形成稳定的TiSi_2.用俄歇电子能谱和X射线衍射来监测硅化物的形成.用扫描电子显微镜观察了TiSi_2薄膜的等离子刻蚀情况.分别采用I—V法和C—V法测量了TiSi_2/Si接触的肖特基势垒高度.利用圆形传输线模型外推法求得了TiSi_2/Si引的接触电阻率,这比同样条件下Al/Si的接触电阻率低一个数量级以上.

TiSi2 thin filims were prepared by PECVD and annealed at 800℃ for 30 min. Auger-electron spectroscopy and X-ray diffraction were used to monitor the silicide-formation reaction. The characteristics of plasma etching were observed by scanning electron microscopy. The Schottky barrier heights of TiSi2 on both n-type Si (100) and p-type Si(111) have been measured with the use of current-voltage and capacitance-voltage techniques. By extrapolation method of circular transmission line model, the contact resistivity of TiSi2/Si structure has been obtained, one order of magnitude lower than that of Al/Si under the same conditions.