半导体合金介电常数的紧束缚计算

Calculations of Dielectric Constants of Semiconductor Alloys in Tight-Binding Frame

采用经验的紧束缚方法,在虚晶近似下,计算了与InP晶格相匹配的半导体合金Ga_xIn_(1-x)P_yAs_(1-y)的介电常数虚部.计算时同时考虑了动量矩阵元的效应.

Using the empirical tight-binding method, the imaginary parts of dielectric constants of semiconductor alloys GaxIn1-xPyAs1-y lattice-matched to InP have been calculated in virtual crystal approximation, The effects of momentum matrix elements have been considered in the calculation.