半导体微传感器的模型与模拟

Model and Modelling of Semiconductor Microsensors

本文以泊松方程和电流连续性方程作为基本方程,并考虑各种物理效应,归纳了几种半导体微传感器的数值模型,提出应用广义Galerkin方法进行微传感器的数值模拟.初步的数值试验表明,广义Galerkin方法可用于微传感器的数值模拟,并具有一定的优越性.

Having taken Poisson equation and current continuity equation as basic equations and considered a variety of physical effects, several numerical models of semiconductor microsensors are reviewed in this paper. A generalized Galerkin method is proposed to be applied in numerical simulation of microsensors. The initial numerical experiment indicates that the generalized Galerkin method is available for numerical simulation of microsensor and shows some superiority.