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金属氧化物薄膜晶体管及其在新型显示中的应用 被引量:12

Metal Oxide Thin Film Transistors and Their Application to Novel Display Technology
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摘要 为适应高分辨率、大尺寸的液晶(LCD)和有源有机发光二极管(AMOLED)等新型显示技术发展的需要,开发了一种新型的基于金属氧化物有源半导体材料的薄膜晶体管(MOTFT)驱动面板.文中阐述了MOTFT的材料、器件结构、制作工艺以及应用,并对影响MOTFT性能的因素进行了讨论.研发团队开发的MOTFT的迁移率最高可达21.6cm2/(V.s),阈值电压为1.63V,开关比为109,亚阈值摆幅为0.216 V/decade.基于该MOTFT驱动面板,在国内率先实现了5英寸彩色AMOLED显示屏.该MOTFT驱动面板具有迁移率高、制作工艺简单、成本较低以及容易实现大面积等优势,在LCD和AMOLED等新型显示领域具有广泛的应用前景. In order to meet the requirements of novel display technologies such as high-resolution large-screen LCD and AMOLED, a novel active-matrix panel is developed. This novel active-matrix panel is based on the metal oxide thin film transistor (MOTFT) with metal oxide semiconductor materials as the active layer. In this paper, the mate- rial, the structure of the device, the fabrication process and the application of MOTFT are expounded, and the fac- tors that influence the MOTFY performance are discussed. Moreover, the relevant research results achieved by the research team are presented as follows: (1) the MOTFT reaches a mobility of 21.6 cm2/Vs at its highest, with a threshold voltage of 1.63 V, a current on/off ratio of 109, and a sub-threshold swing of 0. 216 V/decade; (2) based on the MOTFT panel, the first 5-inch color AMOLED screen in China is developed; and (3) the MOTFT panel has the advantages of high mobility, simple fabrication process, and lower cost as well as greater ease in achieving large screen display. Therefore, it has wide application prospects in developing novel display technologies such as TFT-LCD and AMOLED.
出处 《华南理工大学学报(自然科学版)》 EI CAS CSCD 北大核心 2012年第10期1-11,共11页 Journal of South China University of Technology(Natural Science Edition)
基金 广东省教育部产学研结合项目(2011A090200109) 华南理工大学中央高校基本科研业务费专项资金资助项目(2012ZM0003) 中国博士后科学基金面上资助项目(2011M500131) 广东省优秀博士学位论文作者资助项目(SYBZZXM201113)
关键词 氧化物半导体 薄膜晶体管 AMOLED 新型显示 oxide semiconductor thin film transistors AMOLED novel display
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