Zn_(0.9)Mg_(0.1)O∶Ti透明导电薄膜的制备及研究

Growth and Characterization of ZnMgO∶Ti Transparent Conductive Films

采用磁控溅射法在不同的溅射压强下制备了ZnMgO∶Ti透明导电薄膜。着重研究了溅射压强对ZnMgO∶Ti薄膜的晶体结构、电学和光学性能的影响。结果表明:当溅射功率为80W时,电阻率随着溅射压强的增加先减小后增加,在12 Pa时达到最小值1.9×10-3Ω.cm。薄膜结晶程度、晶粒的均匀性及致密性对电阻率有较大影响。所有条件下制备的薄膜在400～900 nm范围内的透射率均超过90%。相对于6 Pa下沉积的薄膜,在9 Pa和12 Pa下沉积薄膜的光学吸收边界出现"蓝移"现象。用ZnMgO∶Ti透明导电薄膜作透明电极有可能提高太阳能电池的效率。

The ZnMgO∶Ti transparent conductive films were deposited by DC magnetron sputtering on glass substrates.The influencing growth conditions,including the pressure,sputtering power,and substrate temperature,were evaluated.The films were characterized with X-ray diffraction,scanning electron microscopy and conventional surface probes.The results show that the sputtering power and the pressure strongly affect the microstructures and properties of the films.For example,as the pressure increased,the resistivity of the films,deposited at a sputtering power of 80 W,varied in a decrease-increase way,being the lowest,1.9×10-3 Ω·cm,at 12 Pa.The transmittance of all the films grown was found to be over 90% in the light wavelength range from 400 nm to 900 nm.The ＂blue-shift＂ of the absorption edge was found to depend on variations in the pressure,from 6 Pa to 9 Pa and 12 Pa.We suggest that the ZnMgO∶Ti films may considerably improve the efficiency of solar cells.