星用典型CMOS器件54HC04^(60)Co源辐射效应研究

Research of Radiation Effects on Typical CMOS Devices 54HC04 for Space Application by Using the ^(60)Co Source

给出了加固和非加固 5 4HC0 4电路在不同辐射偏置下的低剂量率辐射实验结果 ,探讨了电流转移曲线、辐射感生漏电流、阈值电压、转换电压随辐射剂量的变化关系。

In this study the experiment results for nonhardening and hardening 54HC04 devices at low dose rate under two irradiation biases by using the 60 Co source are presented. The main purpose is to determine the radiation total dose dependence of current transfer characteristic, threshold voltage, radiation induced leakage current and transfer voltage.